The charge-transfer property and the performance of dye-sensitized solar cells of nitrogen doped zinc oxide

被引：8
作者：
Zhang, Lingyun [1 ,2 ]
Yang, Yulin [1 ]
Fan, Ruiqing [1 ]
Chen, Haiyan [1 ]
Jia, Ruokun [2 ]
Wang, Yonghui [3 ]
Ma, Liqun [4 ]
Wang, Yazhen [4 ]
机构：
[1] Harbin Inst Technol, Dept Chem, Harbin 150001, Peoples R China
[2] NE Dianli Univ, Sch Chem Engn, Changchun 132012, Jilin, Peoples R China
[3] NE Normal Univ, Fac Chem, Changchun 130024, Jilin, Peoples R China
[4] Qiqihar Univ, Sch Mat Sci Engn, Qiqihar 161006, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 12期
基金：
美国国家科学基金会;
关键词：
Nitrogen; Zinc oxide; Charge transfer; Photovoltaic; Solar cells; ZNO THIN-FILMS; SCHOTTKY CONTACTS; NANOWIRES; EPITAXY;
D O I：
10.1016/j.mseb.2012.04.026
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study two methods, namely the solution and annealing methods, were used to prepare nitrogen-doped ZnO. The X-ray photoelectron spectroscopy (XPS) was performed to identify the composition and chemical states of N-doped ZnO. The N doping by the solution method was found to effectively decrease the acceptor effects. Surface photovoltage measurements (SPS) revealed a redshift of the threshold wavelength for the N-doped ZnO. And the recombination of photoinduced electron-hole pairs in this semiconductor material was obviously suppressed. The N-doped ZnO (solution method) exhibits the best performances among all the materials, even superior to N-doped ZnO (annealing method). Its J(sc) and eta values (9.35 mA/cm(2) and 2.64%) have enhanced by several times compared with un-doped ZnO (J(sc), 2.85 mA/cm(2); eta, 0.67%). The overall conversion efficiency of ZnO-based dye-sensitized solar cells was successfully improved by the N doping. (c) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：956 / 961
页数：6
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