50 Gb/s Silicon Traveling Wave Mach-Zehnder Modulator near 1300 nm

被引:0
|
作者
Streshinsky, Matthew [1 ]
Ding, Ran
Novack, Ari
Liu, Yang
Tu, Xiaoguang
Lim, Andy Eu-Jin
Chen, Edward Koh Sing
Lo, Patrick Guo-Qiang
Baehr-Jones, Tom
Hochberg, Michael
机构
[1] ASTAR, Inst Microelect, Singapore 117685, Singapore
关键词
VOLTAGE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A silicon traveling-wave Mach-Zehnder modulator near 1300 nm is demonstrated to operate at 50 Gb/s with a differential 2 V-pp signal at 0 V reverse bias, achieving a 800 fJ/bit power consumption.
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页数:3
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