Raman scattering study on anisotropic property of wurtzite GaN

被引:32
作者
Lin, Hung Chiao [1 ,2 ]
Feng, Zhe Chuan [1 ,2 ]
Chen, Ming Song [3 ]
Shen, Ze Xiang [3 ,4 ]
Ferguson, Ian T. [4 ]
Lu, Weijie [5 ]
机构
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[3] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637616, Singapore
[4] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[5] Fisk Univ, Dept Chem, Nashville, TN 37208 USA
关键词
gallium compounds; III-V semiconductors; phonons; polarisation; Raman spectra; semiconductor thin films; spectral line intensity; wide band gap semiconductors; CRYSTALS;
D O I
10.1063/1.3072705
中图分类号
O59 [应用物理学];
学科分类号
摘要
The phonon anisotropy property of the GaN wurtzite crystal is studied using angular dependent Raman spectroscopy both theoretically and experimentally. The polarized Raman scattering spectra were recorded from the cross section of c-axis oriented GaN films as a function of the angle between the incident laser polarization direction and the film normal direction in three different configurations. The Raman intensity of A(1)(TO) showed a sinusoidal dependence on the rotating angle, as also did the E-1(TO) mode, while the E-2 mode has a quite different behavior. The theoretical analysis takes into account the susceptibility contribution and the phase differential of different vibrating elements.
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页数:3
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