Synthesis and Characterization of Cu3(Sb1-x,Asx)S4 Semiconducting Nanocrystal Alloys with Tunable Properties for Optoelectronic Device Applications

被引：28

作者：

Balow, Robert B. ^{[1
,3
]}

Miskin, Caleb K. ^{[2
]}

Abu-Omar, Mahdi M. ^{[1
,2
,4
]}

Agrawal, Rakesh ^{[2
]}

机构：

[1] Purdue Univ, Dept Chem, 560 Oval Dr, W Lafayette, IN 47907 USA

[2] Purdue Univ, Sch Chem Engn, 480 Stadium Mall Dr, W Lafayette, IN 47907 USA

[3] US Navy, Res Lab, Div Chem, Washington, DC 20375 USA

[4] Univ Calif Santa Barbara, Dept Chem Engn, Dept Chem & Biochem, Santa Barbara, CA 93106 USA

来源：

CHEMISTRY OF MATERIALS | 2017年 / 29卷 / 02期

基金：

美国国家科学基金会;

关键词：

SOLAR-CELLS; CIGS; INK;

D O I：

10.1021/acs.chemmater.6b03850

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A synthetic method for producing monodisperse Cu-3(Sb1-x,As-x)S-4 nanocrystals (NCs) with highly tunable semiconducting properties is discussed. Additionally, significant improvement in collectible photocurrent is observed for arsenic rich compositions, with a 10-fold improvement in photocurrent density from Cu3AsS4 NC thin films compared to the more well-studied Cu3SbS4 composition. Interestingly, this improvement in photocurrent is observed despite the increased optical band gap of the arsenic-rich compositions. These results suggest Cu3AsS4 and arsenic-rich compositions of Cu-3(Sb1-x,As-x)S-4 may yield higher photocurrent densities for solar conversion devices. Furthermore, the simple coating strategy, and highly tunable nature of the NCs provides a foundation encompassing inexpensive and earth-abundant semiconducting materials. and robust synthesis, scalable spray numerous fields requiring

引用

页码：573 / 578

页数：6

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