Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

被引：8

作者：

Azeza, Bilel ^{[1
,2
]}

Alouane, Mohamed Helmi Hadj ^{[1
,3
]}

Ilahi, Bouraoui ^{[1
,4
]}

Patriarche, Gilles ^{[3
]}

Sfaxi, Larbi ^{[1
]}

Fouzri, Afif ^{[5
]}

Maaref, Hassen ^{[1
]}

M'ghaieth, Ridha ^{[1
]}

机构：

[1] Univ Monastir, Fac Sci Monastir, Lab Microoptoelect & Nanostruct, Monatir 5019, Tunisia

[2] Northern Borders Univ, Turaif Sci Coll, Turaif 91411, Saudi Arabia

[3] CNRS, UPR20, LPN, F-91460 Marcoussis, France

[4] King Saud Univ, Coll Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia

[5] Univ Monastir, Fac Sci Monastir, Lab Physicochim Mat, Monatir 5019, Tunisia

来源：

MATERIALS | 2015年 / 8卷 / 07期

关键词：

III-V materials for solar cells; Si substrate; molecular beam epitaxy; solar cell; QUALITY; IMPACT; GAAS;

D O I：

10.3390/ma8074544

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n(+)-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n(+)-Si and pin-GaAs/GaAs without QDs. The results reveal the clear contribution of the QDs layers to the improvement of the spectral response up to 1200 nm. The novel structure has been studied by X ray diffraction (XRD), photoluminescence spectroscopy (PL) and transmission electron microscopy (TEM). These results provide considerable insights into low cost III-V material-based solar cells.

引用

页码：4544 / 4552

页数：9

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