Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

被引：12
|
作者：
Johansson, LI [1 ]
Glans, PA
Wahab, Q
Grehk, TM
Eickhoff, T
Drube, W
机构：
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
[2] DESY, Hamburger Synchrotronstrahlungslab Hasylab, D-22603 Hamburg, Germany
来源：
APPLIED SURFACE SCIENCE | 1999年 / 150卷 / 1-4期
关键词：
SiC/SiO2; interfaces; silicon carbide;
D O I：
10.1016/S0169-4332(99)00238-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Si 2p and C 1s core level spectra recorded at different electron emission angles from SiO2/SiC samples using a photon energy of 3.0 keV show two components. These are identified as originating from SiO2 and SiC for Si 2p while for C 1s they are identified to originate from graphite like carbon and SiC. The relative intensity of these components are extracted and compared to calculated intensity variations assuming different models for the elemental distribution in the surface region. For both samples investigated best agreement between experimental and calculated intensity variations with emission angle is obtained when assuming a graphite like layer on top of the oxide layer. Contribution from carbon at the SiC/SiO2 interface could not be identified. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：137 / 142
页数：6
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