Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

被引：12
|
作者：
Johansson, LI [1 ]
Glans, PA
Wahab, Q
Grehk, TM
Eickhoff, T
Drube, W
机构：
[1] Linkoping Univ, Dept Phys, S-58183 Linkoping, Sweden
[2] DESY, Hamburger Synchrotronstrahlungslab Hasylab, D-22603 Hamburg, Germany
来源：
APPLIED SURFACE SCIENCE | 1999年 / 150卷 / 1-4期
关键词：
SiC/SiO2; interfaces; silicon carbide;
D O I：
10.1016/S0169-4332(99)00238-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Si 2p and C 1s core level spectra recorded at different electron emission angles from SiO2/SiC samples using a photon energy of 3.0 keV show two components. These are identified as originating from SiO2 and SiC for Si 2p while for C 1s they are identified to originate from graphite like carbon and SiC. The relative intensity of these components are extracted and compared to calculated intensity variations assuming different models for the elemental distribution in the surface region. For both samples investigated best agreement between experimental and calculated intensity variations with emission angle is obtained when assuming a graphite like layer on top of the oxide layer. Contribution from carbon at the SiC/SiO2 interface could not be identified. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：137 / 142
页数：6
相关论文
共 50 条
  • [1] Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy
    Johansson, L.I.
    Glans, P.-A.
    Wahab, Q.
    Grehk, T.M.
    Eickhoff, Th.
    Drube, W.
    Applied Surface Science, 1999, 150 (01): : 137 - 142
  • [2] Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC
    Hayton, DJ
    Jenkins, TE
    Bailey, P
    Noakes, TCQ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (07) : L29 - L32
  • [3] Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy
    Ohta, Akio
    Makihara, Katsunori
    Miyazaki, Seiichi
    MICROELECTRONIC ENGINEERING, 2015, 147 : 264 - 268
  • [4] Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates
    Hosoi, Takuji
    Uenishi, Yusuke
    Mitani, Shuhei
    Nakano, Yuki
    Nakamura, Takashi
    Shimura, Takayoshi
    Watanabe, Heiji
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 605 - +
  • [5] Interfacial Transition Layer in Thermally Grown SiO2 Film on 4H-SiC
    Hasunuma, Ryu
    2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2017,
  • [6] Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
    Fiorenza, Patrick
    Giannazzo, Filippo
    Roccaforte, Fabrizio
    ENERGIES, 2019, 12 (12)
  • [7] Characterization of SiO2/SiC samples using photoelectron spectroscopy
    Johansson, LI
    Glans, PA
    Wahab, Q
    Grehk, TM
    Eickhoff, T
    Drube, W
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 39 - 44
  • [8] Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)
    Hosoi, Takuji
    Kirino, Takashi
    Mitani, Shuhei
    Nakano, Yuki
    Nakamura, Takashi
    Shimura, Takayoshi
    Watanabe, Heiji
    CURRENT APPLIED PHYSICS, 2012, 12 : S79 - S82
  • [9] Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties
    Watanabe, Heiji
    Hosoi, Takuji
    Kirino, Takashi
    Kagei, Yusuke
    Uenishi, Yusuke
    Chanthaphan, Atthawut
    Yoshigoe, Akitaka
    Teraoka, Yuden
    Shimura, Takayoshi
    APPLIED PHYSICS LETTERS, 2011, 99 (02)
  • [10] Investigation of unusual mobile ion effects in thermally grown SiO2 on 4H-SiC(0001) at high temperatures
    Chanthaphan, Atthawut
    Hosoi, Takuji
    Mitani, Shuhei
    Nakano, Yuki
    Nakamura, Takashi
    Shimura, Takayoshi
    Watanabe, Heiji
    APPLIED PHYSICS LETTERS, 2012, 100 (25)
12345