Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

被引：0

作者：

Tseng, Hsueh-Chih ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Cheng, Kai-Hung ^{[3
]}

Huang, Jheng-Jie ^{[1
]}

Chen, Yu-Ting ^{[3
]}

Jian, Fu-Yen ^{[1
]}

Sze, Simon M. ^{[1
,4
,5
]}

Tsai, Ming-Jinn ^{[6
]}

Chu, Ann-Kuo ^{[3
]}

Wang, Ying-Lang ^{[7
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan

[4] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[6] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

[7] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

来源：

THIN SOLID FILMS | 2013年 / 529卷

关键词：

ReRAM; BON; BON:Gd; Interface type; NDR; RANDOM-ACCESS MEMORY; THIN-FILM; OXIDE; RESISTANCE; NANOCRYSTALS; DEVICES; OXYGEN; SRTIO3; LAYER;

D O I：

10.1016/j.tsf.2012.09.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper studies the effect of doping on BON-based resistive switching characteristics. Typical bipolar resistive switching behavior can be observed in Pt/BON/TiN and Pt/BON:Gd/TiN devices. The conductive path(s) of the Pt/BON/TiN is vacancy-dominated while the Pt/BON:Gd/TiN is metal-dominated. Additionally, there is an atypical bipolar resistive switching in the Gd-doping device. This atypical characteristic has not only a size effect, but also a lower operating current. The resistance transitions are due to the variation in conductance of the switching layer, which is clearly influenced by the different area size. A mechanism is proposed to explain this atypical characteristic. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：389 / 393

页数：5

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