Effect of an Ultraviolet-Ozone Treatment on the Electrical Properties of Titanium-Oxide Thin-Film Transistors Fabricated by Using a Sol-Gel Process

被引：11

作者：

Chong, Ho Yong ^{[1
]}

Lee, Se Han ^{[1
]}

Kim, Tae Whan ^{[1
]}

机构：

[1] Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2012年 / 159卷 / 07期

基金：

新加坡国家研究基金会;

关键词：

INDIUM-TIN-OXIDE; DIOXIDE; TIOX; PHOTOLUMINESCENCE; PLASMA; DIODE; FIELD; RF;

D O I：

10.1149/2.016207jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin-film transistors (TFTs) utilizing titanium-oxide channel layers were fabricated by using a sol-gel process. The device characteristics of the channel layer for the TFTs were enhanced, resulting in a shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the ultraviolet-ozone-treated TFTs was as large as 4.78 x 10(5). The surface carrier concentration of the titanium-oxide was decreased due to the decrease in the oxygen deficiency resulting from the negatively-charged oxygen. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.016207jes] All rights reserved.

引用

页码：B771 / B774

页数：4

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