The effect of a cap layer on the diffusion of zinc from doped silica films in gallium arsenide

被引：0
作者：
Chatterjee, S
Bhat, KN
Rao, PRS
机构：
[1] Department of Electrical Engineering, Indian Institute of Technology
来源：
SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 03期
关键词：
ZN DIFFUSION; GAAS; MODEL; MECHANISM;
D O I：
10.1016/S0038-1101(96)00193-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：496 / 500
页数：5
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