Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K

被引:91
作者
Nguyen, Binh-Minh [1 ]
Hoffman, Darin [1 ]
Huang, Edward Kwei-wei [1 ]
Delaunay, Pierre-Yves [1 ]
Razeghi, Manijeh [1 ]
机构
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.2978330
中图分类号
O59 [应用物理学];
学科分类号
摘要
The utilization of the P+-pi-M-N+ photodiode architecture in conjunction with a thick active region can significantly improve long wavelength infrared type-II InAs/GaSb superlattice photodiodes. By studying the effect of the depletion region placement on the quantum efficiency in a thick structure, we achieved a topside illuminated quantum efficiency of 50% for an N-on-P diode at 8.0 mu m at 77 K. Both the double heterostructure design and the application of polyimide passivation greatly reduce the surface leakage, giving an R(0)A of 416 Omega cm(2) for a 1% cutoff wavelength of 10.52 mu m, a Shot-Johnson detectivity of 8.1 x 10(11) cm root Hz/W at 77 K, and a background limited operating temperature of 110 K with 300 K background. (C) 2008 American Institute of Physics.
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页数:3
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共 26 条
[1]   Passivation of W-structured type-II superlattice long-wave infrared photodiodes [J].
Aifer, E. H. ;
Warner, J. H. ;
Stine, R. R. ;
Vurgaftman, I. ;
Canedy, C. L. ;
Jackson, E. M. ;
Tischler, J. G. ;
Meyer, J. R. ;
Petrovykh, D. Y. ;
Whitman, L. J. .
INFRARED TECHNOLOGY AND APPLICATIONS XXXIII, 2007, 6542
[2]   Recent progress in W-structured type-II superlattice photodiodes [J].
Aifer, E. H. ;
Vurgaftman, I. ;
Canedy, C. L. ;
Warner, J. H. ;
Jackson, E. M. ;
Tischler, J. G. ;
Meyer, J. R. .
QUANTUM SENSING AND NANOPHOTONIC DEVICES IV, 2007, 6479
[3]  
AIFER EH, 1970, QUANTUM SENSING NANO, V3
[4]  
[Anonymous], 1975, SOLAR CELLS
[5]   Passivation of type-II InAs/GaSb double heterostructure [J].
Delaunay, Pierre-Yves ;
Hood, Andrew ;
Nguyen, Binh Minh ;
Hoffman, Darin ;
Wei, Yajun ;
Razeghi, Manijeh .
APPLIED PHYSICS LETTERS, 2007, 91 (09)
[6]   Substrate removal for high quantum efficiency back side illuminated type-II InAs/GaSb photodetectors [J].
Delaunay, Pierre-Yves ;
Nguyen, Binh Minh ;
Hofman, Darin ;
Razeghi, Manijeh .
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[7]  
DELAUNAY PY, 1910, IEEE J QUAN IN PRESS
[8]   InAs/Ga1-xInxSb infrared superlattice diodes:: Correlation between surface morphology and electrical performance [J].
Fuchs, F ;
Bürkle, L ;
Pletschen, W ;
Schmitz, J ;
Walther, M ;
Güllich, H ;
Herres, N ;
Müller, S .
MATERIALS AND ELECTRONICS FOR HIGH-SPEED AND INFRARED DETECTORS, 1999, 3794 :41-46
[9]   Auger recombination in narrow-gap semiconductor superlattices incorporating antimony [J].
Grein, CH ;
Flatté, ME ;
Olesberg, JT ;
Anson, SA ;
Zhang, L ;
Boggess, TF .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (12) :7311-7316
[10]   InAs/GaSb type-II superlattices for high performance mid-infrared detectors [J].
Haugan, HJ ;
Brown, GJ ;
Smulowicz, F ;
Grazulis, L ;
Mitchel, WC ;
Elhamri, S ;
Mitchell, WD .
JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) :198-202