Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K

被引：91

作者：

Nguyen, Binh-Minh ^{[1
]}

Hoffman, Darin ^{[1
]}

Huang, Edward Kwei-wei ^{[1
]}

Delaunay, Pierre-Yves ^{[1
]}

Razeghi, Manijeh ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2978330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The utilization of the P+-pi-M-N+ photodiode architecture in conjunction with a thick active region can significantly improve long wavelength infrared type-II InAs/GaSb superlattice photodiodes. By studying the effect of the depletion region placement on the quantum efficiency in a thick structure, we achieved a topside illuminated quantum efficiency of 50% for an N-on-P diode at 8.0 mu m at 77 K. Both the double heterostructure design and the application of polyimide passivation greatly reduce the surface leakage, giving an R(0)A of 416 Omega cm(2) for a 1% cutoff wavelength of 10.52 mu m, a Shot-Johnson detectivity of 8.1 x 10(11) cm root Hz/W at 77 K, and a background limited operating temperature of 110 K with 300 K background. (C) 2008 American Institute of Physics.

引用

页数：3

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