Tuning the Dirac Point in CVD-Grown Graphene through Solution Processed n-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole

被引:133
作者
Wei, Peng [1 ]
Liu, Nan [1 ]
Lee, Hye Ryoung [3 ]
Adijanto, Eric [1 ]
Ci, Lijie [4 ]
Naab, Benjamin D. [1 ]
Zhong, Jian Qiang [5 ]
Park, Jinseong [4 ]
Chen, Wei [5 ]
Cui, Yi [2 ,6 ]
Bao, Zhenan [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[4] Samsung Cheil Ind Inc, Elect Mat Res Ctr, San Jose Res Inst, San Jose, CA 95131 USA
[5] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[6] SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
基金
美国国家科学基金会;
关键词
CVD grown graphene; n-type doping; Dirac point; solution-process; transistor; inkjet-printing; FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; ENERGY-LEVEL ALIGNMENT; BILAYER GRAPHENE; EPITAXIAL GRAPHENE; DOPED GRAPHENE; BAND-GAP; SEMICONDUCTOR; FILMS; CONVERSION;
D O I
10.1021/nl303410g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Controlling the Dirac point of graphene is essential for complementary circuits. Here, we describe the use of 2-(2-methoxyphenyl)-1,3-dimethy1-2,3-dihydro-1H-benzoimidazole (o-MeO-DMBI) as a strong n-type dopant for chemical-vapor-deposition (CVD) grown graphene. The Dirac point of graphene can be tuned significantly by spin-coating o-MeO-DMBI solutions on the graphene sheets at different concentrations. The transport of graphene can be changed from p-type to ambipolar and finally n-type. The electron transfer between o-MeO-DMBI and graphene was additionally confirmed by Raman imaging and photoemission spectroscopy (PES) measurements. Finally, we fabricated complementary inverter via inkjet printing patterning of o-MeO-DMBI solutions on graphene to demonstrate the potential of o-MeO-DMBI n-type doping on graphene for future applications in electrical devices.
引用
收藏
页码:1890 / 1897
页数:8
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