Effect of oxygen partial pressure on properties of Nb-doped In2O3 thin films

被引：21

作者：

Gupta, R. K. ^{[1
]}

Ghosh, K. ^{[1
]}

Patel, R. ^{[2
]}

Mishra, S. R. ^{[3
]}

Kahol, P. K. ^{[1
]}

机构：

[1] Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA

[2] Missouri State Univ, Roy Blunt Jordan Valley Innovat Ctr, Springfield, MO 65806 USA

[3] Univ Memphis, Dept Phys, Memphis, TN 38152 USA

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2008年 / 112卷 / 01期

关键词：

indium oxide; pulsed laser deposition; transparent electrode; Hall effect; mobility;

D O I：

10.1016/j.matchemphys.2008.05.025

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nb-doped In2O3 thin films were deposited by pulsed laser deposition technique. The effect of oxygen partial pressure on electrical, structural and optical properties was studied. The conductivity, carrier concentration and mobility of the films decrease with increase in the oxygen pressure after attaining maximum. Low resistivity (9.61 x 10(-5) Omega cm) and high mobility (65 cm(2) V-1 s(-1)) is observed for the film grown under oxygen pressure of 1.0 x 10(-3) mbar. The average transmittance of the films is more than 85%. The optical band gap is found varying between 4.09 and 4.23 eV for various oxygen pressure. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：136 / 139

页数：4

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