Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

被引：25

作者：

Wang, Xingfu ^{[1
]}

Tong, Jinhui ^{[1
]}

Chen, Xin ^{[1
]}

Zhao, Bijun ^{[1
]}

Ren, Zhiwei ^{[1
]}

Li, Danwei ^{[1
]}

Zhuo, Xiangjing ^{[1
]}

Zhang, Jun ^{[1
]}

Yi, Hanxiang ^{[1
]}

Liu, Chao ^{[1
]}

Fang, Fang

Li, Shuti ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China

来源：

CHEMICAL COMMUNICATIONS | 2014年 / 50卷 / 06期

关键词：

WAVELENGTH; DEVICES; LASERS; DIODES;

D O I：

10.1039/c3cc47239f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

引用

页码：682 / 684

页数：3

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