Optimization of GaMnAs growth in low temperature molecular beam epitaxy

被引:20
作者
Kim, KH
Park, JH
Kim, BD
Kim, CS
Kim, D
Kim, HJ
Ihm, YE
机构
[1] Chungnam Natl Univ, Dept Mat Engn, Yusong Ku, Taejon 305764, South Korea
[2] Korea Res Inst Standards & Sci, Mat Evaluat Ctr, Yusong Ku, Taejon 205600, South Korea
关键词
GaMnAs; low temperature growth; MBE; process optimization;
D O I
10.1007/BF03027015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a detailed growth optimization procedure and experimental results for the growth of GaMnAs magnetic semiconductors in low-temperature molecular beam epitaxy. They were explored by using in-situ monitoring of the surface reconstruction patterns, double crystal/high-resolution x-ray diffaction, conductivity measurement, and superconducting quantum interference device measurements. The results showed strong correlations among the measurements. The room temperature conductivity measurement, in particular, was found to be a useful tool in forecasting the ferromagnetic transition temperature of the films. High quality GaMnAs films could contain Mn up to similar to5% without MnAs segregation at substrate temperatures of 215similar to275degreesC. The highest transition temperature of 80 K, however, was measured from the sample with 3.7% Mn grown at the substrate temperature of 250degreesC and As-4 pressure of 1.4 x 10(-6) torr for a growth rate of 0.25 mum/hr.
引用
收藏
页码:177 / 181
页数:5
相关论文
共 15 条
[1]   Injection and detection of a spin-polarized current in a light-emitting diode [J].
Fiederling, R ;
Keim, M ;
Reuscher, G ;
Ossau, W ;
Schmidt, G ;
Waag, A ;
Molenkamp, LW .
NATURE, 1999, 402 (6763) :787-790
[2]   (GaMn)As: GaAs-based III-V diluted magnetic semiconductors grown by molecular beam epitaxy [J].
Hayashi, T ;
Tanaka, M ;
Nishinaga, T ;
Shimada, H ;
Tsuchiya, H ;
Otuka, Y .
JOURNAL OF CRYSTAL GROWTH, 1997, 175 :1063-1068
[3]  
HORIKOSHI Y, 1991, LOW TEMPERATURE EPIT, P308
[4]   Material science - Injecting spin into electronics [J].
Oestreich, M .
NATURE, 1999, 402 (6763) :735-737
[5]   (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].
Ohno, H ;
Shen, A ;
Matsukura, F ;
Oiwa, A ;
Endo, A ;
Katsumoto, S ;
Iye, Y .
APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365
[6]   Properties of ferromagnetic III-V semiconductors [J].
Ohno, H .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1999, 200 (1-3) :110-129
[7]   Making nonmagnetic semiconductors ferromagnetic [J].
Ohno, H .
SCIENCE, 1998, 281 (5379) :951-956
[8]   Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].
Ohno, Y ;
Young, DK ;
Beschoten, B ;
Matsukura, F ;
Ohno, H ;
Awschalom, DD .
NATURE, 1999, 402 (6763) :790-792
[9]   Reflection high-energy electron diffraction oscillations during growth of GaAs at low temperatures under high As overpressure [J].
Shen, A ;
Horikoshi, Y ;
Ohno, H ;
Guo, SP .
APPLIED PHYSICS LETTERS, 1997, 71 (11) :1540-1542
[10]   Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As [J].
Shen, A ;
Matsukura, F ;
Guo, SP ;
Sugawara, Y ;
Ohno, H ;
Tani, M ;
Abe, H ;
Liu, HC .
JOURNAL OF CRYSTAL GROWTH, 1999, 201 :679-683