Physics-based Modeling of Gate-leakage Current in AlGaN/GaN High Electron Mobility Transistors

被引：0

作者：

Ma, Xiaoyu ^{[1
]}

Yu, Fei ^{[1
]}

Deng, Walling ^{[1
]}

Huang, Junkai ^{[1
]}

机构：

[1] Jinan Univ, Dept Elect Engn, Guangzhou 510630, Guangdong, Peoples R China

来源：

2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2016年

关键词：

MECHANISMS; HEMTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate-leakage currents AlGaN/GaN high electron mobility transistors (HEMTs) have been studied. The reverse bias gate-leakage current is decomposed into three dominant components, namely, Fowler-Nordheim tunneling, trap-assisted-tunneling, and trap-assisted Frenkel-Poole emission. A physics-based model to calculate this current is given, which follows the experimental gate-leakage current characteristics closely over a wide range of bias and temperature.

引用

页码：157 / 159

页数：3

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