Single phase InxGa1-xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition

被引：55

作者：

Pantha, B. N. ^{[1
]}

Li, J. ^{[1
]}

Lin, J. Y. ^{[2
,3
]}

Jiang, H. X. ^{[2
,3
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

[2] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA

[3] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

关键词：

atomic force microscopy; crystal growth from vapour; electron mobility; gallium compounds; III-V semiconductors; indium compounds; MOCVD; surface roughness; X-ray diffraction;

D O I：

10.1063/1.3006432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of single phase InxGa1-xN alloys for the In composition ranging from 25% to 63% synthesized by metal organic chemical vapor deposition. Single peak of x-ray diffraction theta-2 theta scans of the (002) plane in InGaN alloys confirms that there is no phase separation. It was found both electron mobility and concentration increase with an increase of In content. Atomic force microscopy measurements revealed that the grown films have a surface roughness that varies between 1.5 and 4.0 nm and are free from In droplets. The results suggest that it is possible to synthesize single phase InGaN alloys inside the theoretically predicted miscibility gap.

引用

页数：3

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