High efficiency 8.8-9.6 GHz Class J Power Amplifier

被引：0

作者：

Forouzanfar, Mehdi ^{[1
]}

Feghhi, Rouhollah ^{[1
]}

Baseri, Javad ^{[1
]}

Joodaki, Mojtaba ^{[1
]}

机构：

[1] Ferdowsi Univ Mashhad, Fac Engn, Dept Elect Engn, Mashhad, Iran

来源：

2016 16TH MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS) | 2016年

关键词：

Power amplifier (PA); GaN HEMT; Hybrid; Class J; matching networks; drain efficiency; power added efficiency (PAE);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the first implementation of hybrid 8.8-9.6 GHz X-band class J power amplifier (PA) designed with a GaN HEMT power transistor. High efficiency power amplifiers suffer from nonlinear performance and relatively low bandwidth. The proposed high efficiency class J power amplifier provides larger bandwidth and more convenient linearity performance. The class J PAs should have appropriate matching networks at second harmonic of fundamental frequency which cannot easily realize for high frequency hybrid PAs. In the proposed Class J PA, second harmonic matching network was achieved by using low parasitic GaN HEMT power transistor and precise modeling of transmission lines and passive elements up to 20 GHz. The optimum dimensions of matching networks are determined by employing optimizing algorithm. This PA achieves 14 dB power gain over the frequency range of 8.8-9.6GHz. Drain efficiency and power added efficiency are about 67% and 58% at 9.3 GHZ, respectively that is about 5% higher than class AB X-band power amplifier that is implemented in similar condition.

引用

页数：4

共 15 条

[1]

[Anonymous], 2012, IEEEMTT S INT MICROW

[2]

Barisich G.C., 2013, IEEE INT C MICR COMM, P1

[3]

Campbell CF, 2011, ASIA PACIF MICROWAVE, P243

[4] On the Continuity of High Efficiency Modes in Linear RF Power Amplifiers [J].

Cripps, Steve C. ;

Tasker, Paul J. ;

Clarke, Alan L. ;

Lees, Jonathan ;

Benedikt, Johannes .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (10) :665-667

[5] A NEW CRITERION FOR LINEAR 2-PORT STABILITY USING A SINGLE GEOMETRICALLY DERIVED PARAMETER [J].

EDWARDS, ML ;

SINSKY, JH .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (12) :2303-2311

[6]

Gonzalez G, 1997, MICROWAVE TRANSISTOR, V2

[7] A Design of X-Band 40 W Pulse-Driven GaN HEMT Power Amplifier [J].

Jeong, Hae-Chang ;

Yeom, Kyung-Whan .

IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (06) :923-934

[8] An enhanced quasi-monolithic integration technology for microwave and millimeter wave applications [J].

Joodaki, M ;

Kompa, G ;

Hillmer, H .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2003, 26 (04) :402-409

[9]

Khan F., 2008, 2008 IEEE INT RF MIC

[10]

Kim BJ, 2014, 2014 14TH INTERNATIONAL SYMPOSIUM ON COMMUNICATIONS AND INFORMATION TECHNOLOGIES (ISCIT), P1, DOI 10.1109/ISCIT.2014.7011857

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