Evaluation of multiple-quantum-well structure on InGaN template using (11(2)over-bar2) facet growth and mass transport

被引：6

作者：

Fujita, Daisuke ^{[1
]}

Miyatake, Takaaki ^{[1
]}

Shinagawa, Taku ^{[1
]}

Abe, Yuki ^{[1
]}

Murakami, Kazuma ^{[1
]}

Li, Bocheng ^{[1
]}

Matsumoto, Hiroyuki ^{[1
]}

Murayama, Satoru ^{[1
]}

Okada, Narihito ^{[1
]}

Tadatomo, Kazuyuki ^{[1
]}

机构：

[1] Yamaguchi Univ, Grad Sch Sci & Engn, Yamaguchi 7558611, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8 | 2010年 / 7卷 / 7-8期

关键词：

GaN; InGaN; MOVPE; quantum wells; structure; cathodoluminescence; GAN; DISLOCATION;

D O I：

10.1002/pssc.200983509

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We succeeded in the fabrication of a thick InGaN template by (11 (2) over bar2) facet growth and mass transport. Thick InGaN was grown on a GaN (11 (2) over bar2) facet with a stable facet structure. After 20 min annealing under a flow of NH3 and N-2, the InGaN with the (11 (2) over bar2) facet was perfectly embedded owing to mass transport. Subsequently, a multiple-quantum- well structure was fabricated on the InGaN template and characterized using monochromatic cathodeoluminescence measurement. As a result, we found that there were two regions with peak emission wavelengths of 420 and 500 nm because of the compositional pulling effect. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页数：3

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