Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells

被引：31

作者：

Thome, Fabian ^{[1
]}

Leuther, Arnulf ^{[1
]}

Schlechtweg, Michael ^{[1
]}

Ambacher, Oliver ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] Univ Freiburg, Inst Sustainable Syst Engn, D-79110 Freiburg, Germany

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2018年 / 66卷 / 03期

关键词：

High-electron-mobility transistors (HEMTs); millimeter wave (mmW); mmW integrated circuits (MMICs); power amplifier (PA); stacking; W-band;

D O I：

10.1109/TMTT.2017.2772809

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a broadband high-power amplifier (HPA) millimeter-wave integrated circuit (MMIC) covering the extended W-band (65-125 GHz). The MMIC is based on the Fraunhofer IAF 50-nm gate-length metamorphic high-electron-mobility transistor (mHEMT) technology. The HPA consists of two parallelized unit amplifiers. Each unit amplifier (UA) utilizes four stacked-HEMT unit power cells (UPCs) and four-way power combiners at the input and output. The UPCs stack four transistors with a gate width of 4 x 40 mu m per HEMT. The UA achieves an average small-signal gain of 19.4 dB and an average saturated output power of 21.6 dBm at least from 70 to 110 GHz. The HPA yields an average small-signal gain of 16.8 dB and an average saturated output power of 22.5 dBm at least from 68 to 110 GHz. A peak output power of 24.1 dBm is achieved at an operating frequency of 75 GHz.

引用

页码：1312 / 1318

页数：7

共 42 条

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