Effect of high-temperature annealing on the optical and photoluminescence properties of nanocrystalline SiC films

被引：9

作者：

Semenov, A. V. ^{[1
]}

Lopin, A. V. ^{[1
]}

Puzikov, V. M. ^{[1
]}

Vovk, O. M. ^{[1
]}

Dmitruk, I. N. ^{[2
]}

Romano, V. ^{[3
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Single Crystals, UA-61001 Kharkov, Ukraine

[2] Natl Acad Sci Ukraine, Inst Phys, UA-03680 Kiev, Ukraine

[3] Bern Univ Appl Sci Engn & Informat Technol, CH-3400 Burgdorf, Switzerland

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 21期

基金：

瑞士国家科学基金会;

关键词：

Silicon carbide nanocrystalline films; High-temperature annealing; Optical properties; Photoluminescence properties; Stimulated emission; SILICON; LUMINESCENCE; CARBON;

D O I：

10.1016/j.tsf.2012.07.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical and photoluminescence (PL) properties of nanocrystalline 3C-SiC films and the effect of the boundary regions between the nanocrystals were studied for two sets of films: (a) films with 10-15 nm nanocrystal size obtained by direct ion deposition method and (b) similar films annealed in oxygen at 850-950 degrees C. It was shown that annealing of the nanocrystalline SiC films resulted in weaker absorption in a broad spectral range, and to the increase of the optical band gap from 1.8 to 2.2 eV. On the contrary, the edge PL bands in the UV range (2.2 to 2.4 eV) remained similar. In the IR range, three maxima absent in the as-grown films, appeared at 1.52 eV, 1.56 eV and 1.63 eV. Measurement of the intensity of PL maxima as a function of the excitation power showed a nonlinear dependence that was attributed to the onset of stimulated emission. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：6626 / 6630

页数：5

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