Threshold voltage model for MOSFETs with high-K gate dielectrics

被引：21
|
作者：
Liu, XY [1 ]
Kang, JF [1 ]
Sun, L [1 ]
Han, RQ [1 ]
Wang, YY [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 05期
关键词：
gate insulator; high-K gate dielectric; MOSFET; threshold voltage; short channel effect;
D O I：
10.1109/55.998873
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytic threshold voltage model, which can account for the short channel effect and the fringing field effect of sub-100 run high-K gate dielectrics MOSFETs, has been developed. The model considers the two-dimensional (2-D) effect both in silicon bulk and in gate dielectric layer. The results of the model are consistent with 2-D numerical simulation results.
引用
收藏
页码：270 / 272
页数：3
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