Structure and Luminescence Properties of Eu3+ and Dy3+ Co-implanted AlN Films

被引：1

作者：

Ma Hai ^{[1
]}

Wang Xiao-dan ^{[1
]}

Li Xiang ^{[1
]}

Wang Dan ^{[1
]}

Mao Hong-min ^{[1
]}

Zeng Xiong-hui ^{[2
]}

机构：

[1] Suzhou Univ Sci & Technol, Sch Math & Phys, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Tech, Suzhou 215009, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China

来源：

ACTA PHOTONICA SINICA | 2020年 / 49卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Optoelectronics; Aluminum nitride; Europium; Dysprosium; Strain; Cathodoluminescence; Energy transfer; SAPPHIRE; STRESS; GAN;

D O I：

10.3788/gzxb20204908.0831001

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Dy3+ and Eu3+ ions with different doses were implanted into AlN thin films grown by hydride vapor phase epitaxy method. For Dy doped AlN, results of X ray diffraction and Raman scattering show that the compressive stress of the sample increases with the increase of Dy3+ dose. When the Dy3+ dose increases from 5 x 10(14) at/cm(2) to 1 x 10(15) at/cm(2), the compressive stress of samples is close to saturation. For Dy3+ and Eu3+ co-doped AlN, according to the cathodoluminescence spectra, a possible energy transfer process between Dy3+ and Eu3+ is proposed. In addition, through changing the dose ratio of Dy3+ respect to Eu3+ ions, the chromaticity coordinates and color temperatures of Dy3+ and Eu3+ co-doped AlN can be effectively regulated.

引用

页数：7

共 24 条

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