Stabilization of lateral mode transients in high-power broad area semiconductor lasers

被引：9

作者：

Chen, Chen ^{[1
]}

Leisher, Paul ^{[3
]}

Patterson, Steve ^{[3
]}

Crump, Paul ^{[4
]}

Kim, Yong Kwan ^{[2
]}

Choquette, Kent ^{[1
]}

机构：

[1] Univ Illinois, Urbana, IL 61801 USA

[2] Intel Corp, Santa Clara, CA 95054 USA

[3] nLight Corp, Vancouver, WA 98665 USA

[4] Ferdinand Braun Inst, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期

关键词：

laser cavity resonators; laser modes; laser stability; optical self-focusing; semiconductor lasers; FILAMENTATION;

D O I：

10.1063/1.3067866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lateral modes in high-power broad area gain-guided semiconductor lasers suffer from instabilities that can lead to self-focusing of the optical modes resulting in the formation of beam filaments. The introduction of cold-cavity index guiding, by means of etched holes, has been previously shown to reduce filament formation in the optical near field. In this work, a simple measurement technique is presented and utilized to characterize the behavior of local intensity fluctuations in the time domain. The use of etched holes to provide index guiding is shown to provide a significant improvement in the temporal stability of the lateral optical modes.

引用

页数：3

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