Enhanced irradiation resistance of amorphous alloys by introducing amorphous/amorphous interfaces

被引：26

作者：

Huang, L. ^{[1
]}

Chen, Z. Q. ^{[2
]}

Liu, W. B. ^{[3
,4
]}

Huang, P. ^{[1
]}

Meng, X. K. ^{[2
]}

Xu, K. W. ^{[1
]}

Wang, F. ^{[4
]}

Lu, T. J. ^{[4
,5
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian, Shaanxi, Peoples R China

[2] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Inst Mat Engn, Nanjing, Jiangsu, Peoples R China

[3] Xi An Jiao Tong Univ, Dept Nucl Sci & Technol, Xian, Shaanxi, Peoples R China

[4] Xi An Jiao Tong Univ, State Key Lab Strength & Vibrat Mech Struct, Xian, Shaanxi, Peoples R China

[5] Nanjing Univ Aeronaut & Astronaut, State Key Lab Mech & Control Mech Struct, Nanjing, Jiangsu, Peoples R China

来源：

INTERMETALLICS | 2019年 / 107卷

基金：

中国国家自然科学基金;

关键词：

Irradiation resistance; Amorphous alloys; Nanolaminates; Interface; Microstructure; ION IRRADIATION; HE-ION; METALLIC-GLASS; RADIATION-DAMAGE; DEFORMATION; TOLERANCE; MECHANISMS; CHALLENGES; REDUCTION;

D O I：

10.1016/j.intermet.2019.01.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

To clarify the effect of amorphous/amorphous (A/A) interfaces during ion irradiation, the He ion irradiation responses of ZrCu/ZrCuNiAlSi A/A nanolaminates (A/ANLs) as well as ZrCu and ZrCuNiAlSi single-layered amorphous thin films were examined. The results showed the A/ANLs exhibited superior irradiation resistance compared with the corresponding single-layered thin films, as the former possessed better microstructure stability and higher He ion solubility than the latter during He ion irradiation. Besides, A/ANLs having more interfaces exhibited even better irradiation resistance than those having less. The enhanced irradiation resistance of A/ANLs was attributed to the sink effect of A/A interfaces, which effectively reduced the amount of radiation induced "defects" and He bubbles.

引用

页码：39 / 46

页数：8

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