Broadband light source using modulated quantum dot structures with sandwiched sub-nano separator (SSNS) technique

被引：21

作者：

Yamamoto, Naokatsu ^{[1
]}

Akahane, Kouichi ^{[1
]}

Kawanishi, Tetsuya ^{[1
]}

Sotobayashi, Hideyuki ^{[2
]}

Fujioka, Hiroki ^{[3
]}

Takai, Hiroshi ^{[3
]}

机构：

[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukui Kita, Koganei, Tokyo 1848795, Japan

[2] Aoyama Gakuin Univ, Sagamihara, Kanagawa 2298558, Japan

[3] Tokyo Denki Univ, Tokyo 1018457, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期

关键词：

quantum dot; infrared light source; broadband optical gain; nano-structure; laser; TRANSMISSION;

D O I：

10.1002/pssc.201000476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband light source for a wavelength range of around 1.2-1.3 mu m can be fabricated using a multi-stacked and modulated InAs/InGaAs quantum dot (QD) structure with the sandwich sub-nano separator (SSNS) technique. These techniques, such as use of the modulated QD structure and SSNS structure, are considered useful in obtaining a high-quality and ultra-broadband QD optical gain material for the laser and/or optical amplifier. A broadband (> 75 nm bandwidth) and bright (few tenths of a mW) light emission in its waveband is successfully demonstrated from a QD laser diode using a modulated QD optical gain with the SSNS technique. [GRAPHICS] (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：328 / 330

页数：3

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