Recombination dynamics in InGaN quantum wells

被引：116

作者：

Jeon, ES

Kozlov, V

Song, YK

Vertikov, A

Kuball, M

Nurmikko, AV

Liu, H

Chen, C

Kern, RS

Kuo, CP

Craford, MG

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

[2] HEWLETT PACKARD CORP,DIV OPTOELECT,SAN JOSE,CA 95131

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 27期

关键词：

D O I：

10.1063/1.116983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient photoluminescence measurements are reported on a thin InGaN single quantum well, encompassing the high injection regime. The radiative processes that dominate the recombination dynamics, especially at low temperatures, show the impact of localized electronic states that are distributed over a large energy range (similar to 100 meV). We suggest that these states originate from microstructural disorder in the InGaN/GaN system. (C) 1996 American Institute of Physics.

引用

页码：4194 / 4196

页数：3

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