Improved photoluminescence and sensing stability of porous silicon nanowires by surface passivation

被引:19
作者
Gan, Lu [1 ]
He, Haiping [1 ]
Sun, Luwei [1 ]
Ye, Zhizhen [1 ]
机构
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
关键词
CONTROLLED GROWTH; SI NANOWIRES; ARRAYS; FABRICATION; LUMINESCENCE; EMISSION; FILMS; NANOSTRUCTURES; NANOCRYSTALS; TEMPERATURE;
D O I
10.1039/c3cp53952k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Core-shell structured silicon nanowires (Si NWs) were obtained by coating Si NWs with an HfO2 layer. Enhanced photoluminescence (PL) and a slightly decreased PL lifetime are achieved by HfO2 coating. Furthermore, the sensing stability is strongly improved. The improvement of PL properties is interpreted in terms of surface passivation and the Purcell effect.
引用
收藏
页码:890 / 894
页数:5
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