Fabrication and Properties of the Novel HfSiON High-k Gate Dielectrics Films

HfSiON thin films were prepared on p-type Si substrates by using reactive radio-frequency sputtering deposition. Composition, structure and dielectric properties of the new high-k gate dielectric HfSiON films were investigated. XRD analyses show that the films are amorphous even after annealed at 900 degrees C. The capacitance-voltage (C-V) curves of MOS capacitor present that the dielectric constant k of the films is about 18.9 and the capacitance equivalent oxide thickness is 4.5 nm. I-V characteristic exhibits that the low leakage current of 2.5 x 10(-7) A/cm(2) and 4.9 x 10(-7) A/cm(2) at V-g=+1.5 V and -1.5 V, respectively. The analyses results show that HfSiON films will be a promising candidate for SiO2 gate dielectric.