1/f dielectric polarization noise in silicon p-n junctions

Dielectric polarization noise in silicon p-n junctions was measured at low leakage current, less than 1 x 10(-17) A, and at temperatures between 110 and 200 K. The power spectra of the noise voltages exhibit 1/f characteristics, where f is the frequency. The dielectric loss of the p-n junctions, which was derived from the 1/f noise by using the fluctuation-dissipation theorem, is proportional to the temperature, and is almost independent of the characteristics of the p-n junctions. (C) 1997 American Institute of Physics.