Investigation of spin lifetime in strained InxGa1-xAs channels through all-electrical spin injection and detection

被引：2
作者：
Akiho, Takafumi [1 ]
Yamamoto, Masafumi [1 ]
Uemura, Tetsuya [1 ]
机构：
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Sapporo, Hokkaido 0600814, Japan
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 09期
基金：
日本科学技术振兴机构;
关键词：
SEMICONDUCTORS; GAAS;
D O I：
10.7567/APEX.8.093001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the spin-dependent transport properties of strained InxGa1-xAs (x = 0.04, 0.07, and 0.16) channels grown on GaAs substrates by observing the spin-valve and Hanle signals in a lateral spin-transport device with an Fe spin source. The spin lifetime in the strained InxGa1-xAs channels estimated according to Hanle signals was one order of magnitude smaller than that in GaAs channels, and the spin lifetime depended on the degree of strain induced in the InxGa1-xAs layer. These results are explained by the strain-induced spin-orbit interaction. (C) 2015 The Japan Society of Applied Physics
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页数：4
相关论文
共 32 条
[1]   Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source [J].
Akiho, Takafumi ;
Shan, Jinhai ;
Liu, Hong-xi ;
Matsuda, Ken-ichi ;
Yamamoto, Masafumi ;
Uemura, Tetsuya .
PHYSICAL REVIEW B, 2013, 87 (23)
[2]   Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions [J].
Akiho, Takafumi ;
Uemura, Tetsuya ;
Harada, Masanobu ;
Matsuda, Ken-ichi ;
Yamamoto, Masafumi .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (02)
[3]   Spin splitting and spin current in strained bulk semiconductors [J].
Bernevig, BA ;
Zhang, SC .
PHYSICAL REVIEW B, 2005, 72 (11)
[4]   Quantum spin hall effect [J].
Bernevig, BA ;
Zhang, SC .
PHYSICAL REVIEW LETTERS, 2006, 96 (10)
[5]   All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration [J].
Bruski, P. ;
Manzke, Y. ;
Farshchi, R. ;
Brandt, O. ;
Herfort, J. ;
Ramsteiner, M. .
APPLIED PHYSICS LETTERS, 2013, 103 (05)
[6]   DETERMINATION OF CRITICAL LAYER THICKNESS AND STRAIN TENSOR IN INXGA1-XAS GAAS QUANTUM-WELL STRUCTURES BY X-RAY-DIFFRACTION [J].
CHEN, YC ;
BHATTACHARYA, PK .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (11) :7389-7394
[7]   Electrical spin injection and detection in lateral all-semiconductor devices [J].
Ciorga, M. ;
Einwanger, A. ;
Wurstbauer, U. ;
Schuh, D. ;
Wegscheider, W. ;
Weiss, D. .
PHYSICAL REVIEW B, 2009, 79 (16)
[8]   ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].
DATTA, S ;
DAS, B .
APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667
[9]  
Dyakonov MI, 2008, SPRINGER SER SOLID-S, V157, P1, DOI 10.1007/978-3-540-78820-1_1
[10]   Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties [J].
Ebina, Yuya ;
Akiho, Takafumi ;
Liu, Hong-xi ;
Yamamoto, Masafumi ;
Uemura, Tetsuya .
APPLIED PHYSICS LETTERS, 2014, 104 (17)
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