InSitu Reduction of Charge Noise in GaAs/AlxGa1-xAs Schottky-Gated Devices

被引：74

作者：

Buizert, Christo ^{[1
,2
]}

Koppens, Frank H. L. ^{[1
]}

Pioro-Ladriere, Michel ^{[2
]}

Tranitz, Hans-Peter ^{[3
]}

Vink, Ivo T. ^{[1
]}

Tarucha, Seigo ^{[2
,4
]}

Wegscheider, Werner ^{[3
]}

Vandersypen, Lieven M. K. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2600 GA Delft, Netherlands

[2] Japan Sci & Technol Agcy, ICORP, Quantum Spin Informat Project, Atsugi, Kanagawa 2430198, Japan

[3] Univ Regensburg, Inst Angew & Expt Phys, Regensburg, Germany

[4] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.101.226603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of "bias cooling." Upon noise reduction, the noise power spectrum generally changes from Lorentzian to 1/f type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.

引用

页数：4

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