机构:
NASA, Ames Res Ctr, Ctr Nanotechnol, Mail Stop 229-1, Moffett Field, CA 94035 USANASA, Ames Res Ctr, Ctr Nanotechnol, Mail Stop 229-1, Moffett Field, CA 94035 USA
Anantram, MP
[1
]
Léonard, F
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机构:NASA, Ames Res Ctr, Ctr Nanotechnol, Mail Stop 229-1, Moffett Field, CA 94035 USA
Léonard, F
机构:
[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Mail Stop 229-1, Moffett Field, CA 94035 USA
[2] Sandia Natl Labs, Nanoscale Sci & Technol Dept, Livermore, CA 94551 USA
Carbon nanotubes (CNTs) are amongst the most explored one-dimensional nanostructures and have attracted tremendous interest from fundamental science and technological perspectives. Albeit topologically simple, they exhibit a rich variety of intriguing electronic properties, such as metallic and semiconducting behaviour. Furthermore, these structures are atomically precise, meaning that each carbon atom is still three-fold coordinated without any dangling bonds. CNTs have been used in many laboratories to build prototype nanodevices. These devices include metallic wires, field-effect transistors, electromechanical sensors and displays. They potentially form the basis of future all-carbon electronics. This review deals with the building blocks of understanding the device physics of CNT-based nanodevices. There are many features that make CNTs different from traditional materials, including chirality-dependent electronic properties, the one-dimensional nature of electrostatic screening and the presence of several direct bandgaps. Understanding these novel properties and their impact on devices is crucial in the development and evolution of CNT applications.