Physics of carbon nanotube electronic devices

被引:411
作者
Anantram, MP [1 ]
Léonard, F
机构
[1] NASA, Ames Res Ctr, Ctr Nanotechnol, Mail Stop 229-1, Moffett Field, CA 94035 USA
[2] Sandia Natl Labs, Nanoscale Sci & Technol Dept, Livermore, CA 94551 USA
关键词
D O I
10.1088/0034-4885/69/3/R01
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Carbon nanotubes (CNTs) are amongst the most explored one-dimensional nanostructures and have attracted tremendous interest from fundamental science and technological perspectives. Albeit topologically simple, they exhibit a rich variety of intriguing electronic properties, such as metallic and semiconducting behaviour. Furthermore, these structures are atomically precise, meaning that each carbon atom is still three-fold coordinated without any dangling bonds. CNTs have been used in many laboratories to build prototype nanodevices. These devices include metallic wires, field-effect transistors, electromechanical sensors and displays. They potentially form the basis of future all-carbon electronics. This review deals with the building blocks of understanding the device physics of CNT-based nanodevices. There are many features that make CNTs different from traditional materials, including chirality-dependent electronic properties, the one-dimensional nature of electrostatic screening and the presence of several direct bandgaps. Understanding these novel properties and their impact on devices is crucial in the development and evolution of CNT applications.
引用
收藏
页码:507 / 561
页数:55
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