Substrate Induced Optical Anisotropy in Monolayer MoS2

被引:12
作者
Shen, Wanfu [1 ,2 ,3 ]
Wei, Yaxu [1 ,2 ,3 ]
Hu, Chunguang [2 ,3 ]
Lopez-Posadas, C. B. [1 ]
Hohage, Michael [1 ]
Sun, Lidong [1 ]
机构
[1] Johannes Kepler Univ Linz, Inst Expt Phys, A-4040 Linz, Austria
[2] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, CN-300072 Tianjin, Peoples R China
[3] Tianjin Univ, Nanchang Inst Microtechnol, Tianjin 300072, Peoples R China
基金
奥地利科学基金会;
关键词
PHOTOLUMINESCENCE; WS2;
D O I
10.1021/acs.jpcc.0c02715
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In-plane optical anisotropy has been detected from monolayer MoS2 grown on a-plane (11 (2) over bar0) sapphire substrate in the ultraviolet-visible wavelength range. Based on the measured optical anisotropy, the energy differences between the optical transitions polarized along the ordinary and extraordinary directions of the underlying sapphire substrate have been determined. The results corroborate comprehensively with the dielectric environment induced modification on the electronic band structure and exciton binding energy of monolayer MoS2 predicted recently by first-principle calculations. The output of this study proposes the symmetry as a new degree of freedom for dielectric engineering of the two-dimensional materials.
引用
收藏
页码:15468 / 15473
页数:6
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