Effects of void-crack interaction and void distribution on crack propagation in single crystal silicon

被引：25

作者：

Wang, Liang ^{[1
]}

Liu, Qunfeng ^{[1
]}

Shen, Shengping ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Aerosp, State Key Lab Strength & Vibrat Mech Struct, Xian 710049, Peoples R China

来源：

ENGINEERING FRACTURE MECHANICS | 2015年 / 146卷

基金：

中国博士后科学基金;

关键词：

Single crystal silicon; Crack-void interaction; Void-void interaction; Fracture toughness; MOLECULAR-DYNAMICS SIMULATION; GROWTH RESISTANCE; DUCTILE FRACTURE; BRITTLE CRACK; STRESS; MECHANICS;

D O I：

10.1016/j.engfracmech.2015.07.021

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

Interaction between crack and pre-existing voids in single crystal silicon has been investigated by performing molecular dynamics simulation. It is found that the presence of a single void, ahead of crack tip, can affect the crack propagation through crack-void interaction in one-void model. As the crack-void ligament distance gradually approaches the critical distance, the crack propagation speed decreases. For two-void model, crack propagation behaviors can be substantially influenced by voids distributions (voids aligned along or perpendicular to crack line) under different crack retarding mechanisms, indicating that the distribution of voids provides a prominent role in blocking the crack propagation. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：56 / 66

页数：11

共 50 条

[1]

Abraham F. F., 1998, Journal of Computer-Aided Materials Design, V5, P73, DOI 10.1023/A:1008618614519

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