A Novel RF SOI LDMOS with a Raised Drift Region

被引：2

作者：

Xu, Qin ^{[1
]}

Guo, Yufeng ^{[1
]}

Zhang, Ying ^{[1
]}

Liu, Leilei ^{[1
]}

Yao, Jiafei ^{[1
]}

Sheu, Gene ^{[2
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Jiangsu, Peoples R China

[2] Asia Univ, Dept Comp Sci & Informat Engn, Taichung 41354, Taiwan

来源：

2012 INTERNATIONAL WORKSHOP ON INFORMATION AND ELECTRONICS ENGINEERING | 2012年 / 29卷

关键词：

RF; SOI LDMOS; Raised Drift Region; breakdown voltage; cutoff frequency; DESIGN;

D O I：

10.1016/j.proeng.2012.01.021

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In this paper, we propose a novel RF SOI LDMOS with a raised drift region (RDR). Using the process simulation and numerical simulation, we investigate deeply on breakdown characteristics and frequency characteristics of this novel device. Compared with the conventional RESURF device, the breakdown voltage and cutoff frequency of the RDR device are increased by 25% and 21%, respectively. The work of this paper has theoretical and practical significations to the research of a new generation of deep sub-micron high-performance radio frequency SOI integrated circuits. (C) 2011 Published by Elsevier Ltd.

引用

页码：668 / 672

页数：5

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