Synchronized B and 13C Diamond Delta Structures for an Ultimate In-Depth Chemical Characterization

被引：18

作者：

Fiori, Alexandre ^{[1
,2
,3
]}

Jomard, Francois ^{[4
,5
]}

Teraji, Tokuyuki ^{[3
]}

Koizumi, Satoshi ^{[3
]}

Isoya, Junichi ^{[6
]}

Gheeraert, Etienne ^{[1
,2
]}

Bustarret, Etienne ^{[1
,2
]}

机构：

[1] CNRS, Inst Neel, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, F-38042 Grenoble 9, France

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[4] CNRS, GEMaC, F-78035 Versailles, France

[5] Univ Versailles St Quentin, F-78035 Versailles, France

[6] Univ Tsukuba, Tsukuba, Ibaraki 3058550, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 04期

基金：

日本学术振兴会; 日本科学技术振兴机构;

关键词：

SILICON;

D O I：

10.7567/APEX.6.045801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nanometer-range depth resolution of secondary ion mass spectrometry (SIMS) profiles in diamond was achieved by the determination of the depth resolution function (DRF). The measurement of this DRF was performed thanks to isotopic-enriched diamond delta structures composed of C-12 and C-13. The artificial SIMS broadening observed on the C-13 depth profiles of buried doped diamond epilayers was eliminated and replaced by a boxlike C-13 depth profile. Applied to boron delta-doped diamond structures, this analysis has resolved edge widths close to 0.3 nm/dec, as compared with 1.5 nm/decade on the raw SIMS data. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 18 条

[1] Local boron doping quantification in homoepitaxial diamond structures [J].

Araujo, D. ;

Achatz, P. ;

El Bouayadi, R. ;

Garcia, A. J. ;

Alegre, M. P. ;

Villar, M. P. ;

Jomard, F. ;

Bustarret, E. .

[2] Transport behavior of holes in boron delta-doped diamond structures [J].

Balmer, Richard S. ;

Friel, Ian ;

Hepplestone, Steven ;

Isberg, Jan ;

Uren, Michael J. ;

Markham, Matthew L. ;

Palmer, Nicola L. ;

Pilkington, James ;

Huggett, Paul ;

Majdi, Saman ;

Lang, Richard .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (03)

[3] Hole transport in boron delta-doped diamond structures [J].

Chicot, G. ;

Thi, T. N. Tran ;

Fiori, A. ;

Jomard, F. ;

Gheeraert, E. ;

Bustarret, E. ;

Pernot, J. .

APPLIED PHYSICS LETTERS, 2012, 101 (16)

[4] AN ANALYTIC FORM FOR THE SIMS RESPONSE FUNCTION MEASURED FROM ULTRA-THIN IMPURITY LAYERS [J].

DOWSETT, MG ;

ROWLANDS, G ;

ALLEN, PN ;

BARLOW, RD .

SURFACE AND INTERFACE ANALYSIS, 1994, 21 (05) :310-315

[5] Growth and electrical characterisation of 6-doped boron layers on (111) diamond surfaces [J].

Edgington, Robert ;

Sato, Syunsuke ;

Ishiyama, Yuichiro ;

Morris, Richard ;

Jackman, Richard B. ;

Kawarada, Hiroshi .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)

[6] In situ etching-back processes for a sharper top interface in boron delta-doped diamond structures [J].

Fiori, Alexandre ;

Thu Nhi Tran Thi ;

Chicot, Gauthier ;

Jomard, Francois ;

Omnes, Franck ;

Gheeraert, Etienne ;

Bustarret, Etienne .

[7]

Gautier B, 1996, SURF INTERFACE ANAL, V24, P733, DOI 10.1002/(SICI)1096-9918(199610)24:11<733::AID-SIA173>3.0.CO

[8]

2-W

[9] DEPTH RESOLUTION IN SPUTTER PROFILING [J].

HOFMANN, S .

APPLIED PHYSICS, 1977, 13 (02) :205-207

[10] Optical and Spin Coherence Properties of Nitrogen-Vacancy Centers Placed in a 100 nm Thick Isotopically Purified Diamond Layer [J].

Ishikawa, Toyofumi ;

Fu, Kai-Mei C. ;

Santori, Charles ;

Acosta, Victor M. ;

Beausoleil, Raymond G. ;

Watanabe, Hideyuki ;

Shikata, Shinichi ;

Itoh, Kohei M. .

NANO LETTERS, 2012, 12 (04) :2083-2087

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