Highly Transparent and Flexible Triboelectric Nanogenerators with Subwavelength-Architectured Polydimethylsiloxane by a Nanoporous Anodic Aluminum Oxide Template

被引:87
作者
Dudem, Bhaskar [1 ]
Ko, Yeong Hwan [1 ]
Leem, Jung Woo [1 ]
Lee, Soo Hyun [1 ]
Yu, Jae Su [1 ]
机构
[1] Kyung Hee Univ, Dept Elect & Radio Engn, Yongin 446701, South Korea
基金
新加坡国家研究基金会;
关键词
transparency; triboelectric nanogenerators; subwavelength architectured PDMS; anodic aluminum oxide; SOFT LITHOGRAPHY; MECHANICAL ENERGY; COMPOSITE STAMPS; POWER SOURCE; SOLAR-CELLS; GENERATOR; SENSORS; ELECTRIFICATION; VIBRATION; FILMS;
D O I
10.1021/acsami.5b05842
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Highly transparent and flexible triboelectric nanogenerators (TENGs) were fabricated using the sub-wavelength-architectured (SWA) polydimethylsiloxane (PDMS) with a nanoporous anodic aluminum oxide (AAO) template as a replica mold. The SWA PDMS could be utilized as a multifunctional film for a triboelectric layer, an antireflection coating, and a self-cleaning surface. The nanopore arrays of AAO were formed by a simple, fast, and cost-effective electrochemical oxidation process of aluminum, which is relatively impressive for fabrication of the TENG device. For electrical contacts, the SWA PDMS was laminated on the indium tin oxide (ITO)-coated polyethylene terephthalate (PET) as a bottom electrode, and the bare ITO-coated PET (i.e., ITO/PET) was used for the top electrode. Compared to the ITO/PET, the SWA PDMS on the ITO/PET improved the transmittance from 80.5 to 83% in the visible wavelength region and also had high transmittances of >85% at wavelengths of 430-455 nm. The SWA PDMS also exhibited the hydrophobic surface with a water contact angle (theta(CA)) of similar to 115 degrees which can be useful for self-cleaning applications. The average transmittance (T-avg) of the entire TENG device was observed to be similar to 70% over a broad wavelength range. At an external pushing frequency of 0.5 Hz, for the TENG device with the ITO top electrode, open-circuit voltage (V-OC) and short-circuit current (I-SC) values of similar to 3.8 V and similar to 0.8 mu A were obtained instantaneously, respectively, which were higher than those (i.e., V-OC approximate to 2.2 V, and I-SC approximate to 0.4 mu A) of the TENG device with a gold top electrode. The effect of external pushing force and frequency on the output device performance of the TENGs was investigated, including the device robustness. A theoretical optical analysis of SWA PDMS was also performed.
引用
收藏
页码:20520 / 20529
页数:10
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