Changes in surface layer of silicon wafers from diamond scratching

被引：239

作者：

Zhang, Zhenyu ^{[1
,2
]}

Wang, Bo ^{[1
]}

Kang, Renke ^{[1
]}

Zhang, Bi ^{[1
,3
]}

Guo, Dongming ^{[1
]}

机构：

[1] Dalian Univ Technol, Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116024, Peoples R China

[2] Chongqing Univ, State Key Lab Mech Transmiss, Chongqing 400044, Peoples R China

[3] Univ Connecticut, Dept Mech Engn, Storrs, CT 06269 USA

来源：

CIRP ANNALS-MANUFACTURING TECHNOLOGY | 2015年 / 64卷 / 01期

关键词：

Surface integrity; Grinding; Silicon; SINGLE-CRYSTAL; ANISOTROPY; MODEL;

D O I：

10.1016/j.cirp.2015.04.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study investigates diamond scratching at a high speed comparable to that in a grinding process on an ultraprecision grinder. Diamond tips are prepared for the study. The scratched silicon wafer is observed for changes in the surface layer with transmission electron microscopy. The observation discovers that an amorphous layer is formed on top of the pristine Si-I phase before the onset of chip formation. This discovery is different from the previous findings in which a damaged silicon layer is identified underneath the amorphous layer. Furthermore, no high pressure phase is found before the onset of chip formation. (C) 2015. CIRP.

引用

页码：349 / 352

页数：4

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