High temperature operation of 1.26 μm ridge waveguide laser with InGaAs metamorphic buffer on GaAs substrate

被引：0
|
作者：
Arai, Masakazu [1 ]
Fujisawa, Takeshi [1 ]
Kobayashi, Wataru [1 ]
Nakashima, Kiichi [1 ]
Yuda, Masahiro [1 ]
Kondo, Yasuhiro [1 ]
机构：
[1] NTT Corp, NTT Photon Labs, Kanagawa, Japan
来源：
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE | 2008年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have successfully developed a 1.26 mu m ridge waveguide laser diode with an InGaAs metamorphic buffer on an GaAs substrate grown by metal-organic vapor-phase epitaxy. This laser has achieved the highest operating temperature (188 degrees C) reported for a metamorphic laser.
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页码：57 / 58
页数：2
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