Diffusion in thin films under potential field

被引：6

作者：

Balandina, N ^{[1
]}

Bokstein, B ^{[1
]}

Ostrovsky, A ^{[1
]}

Ivanov, V ^{[1
]}

Petelin, AL ^{[1
]}

Petelin, S ^{[1
]}

机构：

[1] MOSCOW STEEL & ALLOYS INST,DEPT PHYS CHEM,MOSCOW 117936,RUSSIA

来源：

DEFECT AND DIFFUSION FORUM | 1997年 / 143卷

关键词：

thin films; diffusion; grain boundary; mechanical stresses; potential field;

D O I：

10.4028/www.scientific.net/DDF.143-147.1499

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A model of grain boundary (GB) diffusion in thin films in a potential field is proposed. Experimental study of stresses, bulk and grain boundary diffusion of Cu in Ni thin film is performed. Theoretical estimations are compared with experimental results. The bulk and GB diffusion coefficients appear to increase with the mean stress. A stress gradient reduces the GB diffusion coefficient compared to the homogeneous stress value.

引用

页码：1499 / 1504

页数：6

共 17 条

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