Air stability of C60 based n-type OFETs

被引：17

作者：

Ahmed, Rizwan ^{[1
,2
]}

Simbrunner, Clemens ^{[1
]}

Schwabegger, Guenther ^{[1
]}

Baig, M. A. ^{[2
]}

Sitter, H. ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Solid State Phys & Semicond, A-4040 Linz, Austria

[2] Quaid I Azam Univ, Natl Ctr Phys, Islamabad, Pakistan

来源：

SYNTHETIC METALS | 2014年 / 188卷

关键词：

C-60; Air stability; n-Type OFETs; Single layer encapsulation; Bilayer encapsulation (parylene plus BCB); FIELD-EFFECT TRANSISTORS; LIGHT-EMITTING DEVICES; BARRIER COATINGS; HIGH-MOBILITY; SEMICONDUCTORS; TRANSPORT; POLYMERS;

D O I：

10.1016/j.synthmet.2013.12.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Air stability of C-60 based n-type OFETs was investigated. At ambient conditions, the unencapsulated OFETs show rapid degradation in source-drain currents. In order to study the effects of encapsulation layers on air stability, the OFETs were encapsulated with single layers and bilayers. The OFETs protected by bilayer encapsulation show better air stability as compared to a single layer encapsulation. It has been found, that the barrier performance of the encapsulation layer can be improved by decreasing the surface roughness of the encapsulation layer. Our proposed encapsulation layers for n-type OFETs are transparent and flexible. Therefore, it can be used to encapsulate all type of organic semiconductor based devices also on plastic substrates for flexible devices. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：136 / 139

页数：4

共 41 条

[1] A new method for fabricating transparent barrier layers [J].

Affinito, JD ;

Gross, ME ;

Coronado, CA ;

Graff, GL ;

Greenwell, EN ;

Martin, PM .

THIN SOLID FILMS, 1996, 290 :63-67

[2] Reproducibility and stability of C60 based organic field effect transistor [J].

Ahmed, Rizwan ;

Sams, Michael ;

Simbrunner, Clemens ;

Ullah, Mujeeb ;

Rehman, Kamila ;

Schwabegger, Guenther ;

Sitter, H. ;

Ostermann, Timm .

SYNTHETIC METALS, 2012, 161 (23-24) :2562-2565

[3] Air-stable ambipolar organic transistors [J].

Anthopoulos, Thomas D. ;

Anyfantis, G. C. ;

Papavassiliou, G. C. ;

de Leeuw, Dago M. .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[4] Air-stable n-channel organic transistors based on a soluble C84 fullerene derivative [J].

Anthopoulos, Thomas D. ;

Kooistra, Floris B. ;

Wondergem, Harry J. ;

Kronholm, David ;

Hummelen, Jan C. ;

de Leeuw, Dago M. .

ADVANCED MATERIALS, 2006, 18 (13) :1679-+

[5] New air-stable n-channel organic thin film transistors [J].

Bao, ZA ;

Lovinger, AJ ;

Brown, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208

[6] Inorganic coatings on polymers [J].

Benmalek, M ;

Dunlop, HM .

SURFACE & COATINGS TECHNOLOGY, 1995, 76-77 (1-3) :821-826

[7]

Brabec CJ, 2001, ADV FUNCT MATER, V11, P15, DOI 10.1002/1616-3028(200102)11:1<15::AID-ADFM15>3.0.CO

[8]

2-A

[9] RELIABILITY AND DEGRADATION OF ORGANIC LIGHT-EMITTING DEVICES [J].

BURROWS, PE ;

BULOVIC, V ;

FORREST, SR ;

SAPOCHAK, LS ;

MCCARTY, DM ;

THOMPSON, ME .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :2922-2924

[10] High-performance transparent barrier films of SiOx/SiNx stacks on flexible polymer substrates [J].

Chen, T. N. ;

Wuu, D. S. ;

Wu, C. C. ;

Chiang, C. C. ;

Chen, Y. P. ;

Horng, R. H. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (10) :F244-F248

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