Reliability studies of AlGaN/GaN high electron mobility transistors

被引：50

作者：

Cheney, D. J. ^{[1
]}

Douglas, E. A. ^{[2
]}

Liu, L. ^{[3
]}

Lo, C. F. ^{[3
]}

Xi, Y. Y. ^{[3
]}

Gila, B. P. ^{[2
]}

Ren, F. ^{[3
]}

Horton, David ^{[1
]}

Law, M. E. ^{[1
]}

Smith, David J. ^{[4
]}

Pearton, S. J. ^{[2
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; CRITICAL VOLTAGE; CURRENT COLLAPSE; GAN; DEGRADATION; TEMPERATURE; DEFECTS; HEMTS; RF; ALGAAS/INGAAS;

D O I：

10.1088/0268-1242/28/7/074019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in high power and high frequency applications, but the degradation mechanisms that drive failure in the field are not completely understood. Since some of these mechanisms are current or field driven, reliability studies must go beyond the typical Arrhenius-accelerated life tests. In this paper, we summarize recent work on electric field or current driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plates) and the effect of device fabrication processes for both dc and RF stress conditions.

引用

页数：12

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