Reliability studies of AlGaN/GaN high electron mobility transistors

被引：50

作者：

Cheney, D. J. ^{[1
]}

Douglas, E. A. ^{[2
]}

Liu, L. ^{[3
]}

Lo, C. F. ^{[3
]}

Xi, Y. Y. ^{[3
]}

Gila, B. P. ^{[2
]}

Ren, F. ^{[3
]}

Horton, David ^{[1
]}

Law, M. E. ^{[1
]}

Smith, David J. ^{[4
]}

Pearton, S. J. ^{[2
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[4] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; CRITICAL VOLTAGE; CURRENT COLLAPSE; GAN; DEGRADATION; TEMPERATURE; DEFECTS; HEMTS; RF; ALGAAS/INGAAS;

D O I：

10.1088/0268-1242/28/7/074019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in high power and high frequency applications, but the degradation mechanisms that drive failure in the field are not completely understood. Since some of these mechanisms are current or field driven, reliability studies must go beyond the typical Arrhenius-accelerated life tests. In this paper, we summarize recent work on electric field or current driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plates) and the effect of device fabrication processes for both dc and RF stress conditions.

引用

页数：12

共 58 条

[1] High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates [J].

Arulkumaran, S ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T .

APPLIED PHYSICS LETTERS, 2002, 80 (12) :2186-2188

[2] Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography [J].

Batten, T. ;

Manoi, A. ;

Uren, M. J. ;

Martin, T. ;

Kuball, M. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)

[3] Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy [J].

Batten, T. ;

Pomeroy, J. W. ;

Uren, M. J. ;

Martin, T. ;

Kuball, M. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (09)

[4] Micro-Raman thermometry in the presence of complex stresses in GaN devices [J].

Beechem, T. ;

Christensen, A. ;

Graham, S. ;

Green, D. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)

[5] Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films [J].

Brillson, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1762-1768

[6]

Buchta M, 2010, INT MICR MILL WAV TE

[7] Electric-Field-Driven Degradation in OFF-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors [J].

Chang, Chih-Yang ;

Douglas, E. A. ;

Kim, Jinhyung ;

Lu, Liu ;

Lo, Chien-Fong ;

Chu, Byung-Hwan ;

Cheney, D. J. ;

Gila, B. P. ;

Ren, F. ;

Via, G. D. ;

Cullen, David A. ;

Zhou, Lin ;

Smith, David J. ;

Jang, Soohwan ;

Pearton, S. J. .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (01) :187-193

[8] Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements [J].

Chini, A. ;

Esposto, M. ;

Meneghesso, G. ;

Zanoni, E. .

ELECTRONICS LETTERS, 2009, 45 (08) :426-U61

[9]

Chini A, 2009, 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), P132

[10] Degradation of AlGaN/GaN HEMTs under elevated temperature lifetesting [J].

Chou, YC ;

Leung, D ;

Smorchkova, I ;

Wojtowicz, M ;

Grundbacher, R ;

Callejo, L ;

Kan, Q ;

Lai, R ;

Liu, PH ;

Eng, D ;

Oki, A .

MICROELECTRONICS RELIABILITY, 2004, 44 (07) :1033-1038

← 1 2 3 4 5 6 →