Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode

被引：8

作者：

Chen, Y. Y. ^{[1
,2
]}

Goux, L. ^{[1
]}

Pantisano, L. ^{[1
]}

Swerts, J. ^{[1
]}

Adelmann, C. ^{[1
]}

Mertens, S. ^{[1
]}

Afanas'ev, V. V. ^{[3
]}

Wang, X. P. ^{[1
]}

Govoreanu, B. ^{[1
]}

Degraeve, R. ^{[1
]}

Kubicek, S. ^{[1
]}

Paraschiv, V. ^{[1
]}

Verbrugge, B. ^{[1
]}

Jossart, N. ^{[1
]}

Altimime, L. ^{[1
]}

Jurczak, M. ^{[1
]}

Kittl, J. ^{[1
]}

Groeseneken, G. ^{[1
,2
]}

Wouters, D. J. ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn ESAT, Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Phys, Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 112卷

关键词：

HfO2; RRAM; Bipolar switching; Plasma pre-treatment; PEALD TiN;

D O I：

10.1016/j.mee.2013.02.087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We proposed a new, simpler, and fully BEOL CMOS-compatible TIN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN) in a functional size down to 2275 nm(2) (35 nm x 65 nm). Stable switching was observed between a High-Resistive State HRS (similar to 1 M Omega) and a Low-Resistive State LRS (similar to 100 k Omega), using a low program current of similar to 1 mu A. Two different LRS states can be obtained depending on the current compliance (CC) during SET switching, either 100 mu A (high-CC LRS) or 10 mu A (low-CC LRS), resulting, respectively in LRS resistances of 10 k Omega or 100 k Omega. The projected retention stability of low-CC LRS is >= 10 years at 80 degrees C, which is the retention minimum of the TiN/HfO2/TiN RRAM stack. The temperature-dependent resistance showed a non-metallic behavior for the low-CC LRS state (similar to 100 k Omega), suggesting gentle filament formation. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：92 / 96

页数：5

共 8 条

[1]

[Anonymous], IEEE ELECT DEVICE LE

[2]

Baek IG, 2005, INT EL DEVICES MEET, P769

[3]

Chen Y. S., 2009, IEDM, P105

[4] Bipolar Switching Characteristics and Scalability in NiO Layers Made by Thermal Oxidation of Ni [J].

Goux, L. ;

Polspoel, W. ;

Lisoni, J. G. ;

Chen, Y. -Y ;

Pantisano, L. ;

Wang, X. -P. ;

Vandervorst, W. ;

Jurczak, M. ;

Wouters, D. J. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (08) :G187-G192

[5] Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells [J].

Goux, Ludovic ;

Lisoni, Judit G. ;

Wang, Xin Peng ;

Jurczak, Malgorzata ;

Wouters, Dirk J. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (10) :2363-2368

[6]

Lee H, 2008, STUD COMPUT INTELL, V110, P1, DOI 10.1109/IEDM.2008.4796677

[7] Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories [J].

Nardi, F. ;

Ielmini, D. ;

Cagli, C. ;

Spiga, S. ;

Fanciulli, M. ;

Goux, L. ;

Wouters, D. J. .

SOLID-STATE ELECTRONICS, 2011, 58 (01) :42-47

[8] Memristive switching mechanism for metal/oxide/metal nanodevices [J].

Yang, J. Joshua ;

Pickett, Matthew D. ;

Li, Xuema ;

Ohlberg, Douglas A. A. ;

Stewart, Duncan R. ;

Williams, R. Stanley .

NATURE NANOTECHNOLOGY, 2008, 3 (07) :429-433

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