Refractive index of SnS thin nano-crystalline films

被引：21
作者：
Jakhar, Amit [1 ]
Jamdagni, Ashu [1 ]
Bakshi, Ayushi [3 ]
Verma, Taruna [1 ]
Shukla, Vibhav [1 ]
Jain, Priyal [1 ,2 ]
Sinha, Nidhi [1 ]
Arun, P. [1 ]
机构：
[1] Univ Delhi, SGTB Khalsa Coll, Dept Elect, Delhi 110007, India
[2] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
[3] Univ Delhi, Dept Phys, Hansraj Coll, Delhi 110007, India
来源：
SOLID STATE COMMUNICATIONS | 2013年 / 168卷
关键词：
Semiconductors; Nanocrystalline materials; Refractive index; OPTICAL-PROPERTIES; BEHAVIOR;
D O I：
10.1016/j.ssc.2013.06.013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The refractive indices of nano-crystalline thin films of Tin Sulphide (SnS) were investigated here. The experimental data conformed well with the single oscillator model for refractive indices. Based on the this, we explain the increasing trend of refractive index to the improvement in crystal ordering with increasing grain size. (C) 2013 Elsevier Ltd. All rights reserved.
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页码：31 / 35
页数：5
相关论文
共 26 条
  • [1] Ahmed SM, 2011, J BASRAH RES SCI, V37, P1
  • [2] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE
    BRUS, LE
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1984, 80 (09) : 4403 - 4409
  • [3] Optical and structural studies on SnS films grown by co-evaporation
    Cifuentes, C.
    Boterol, M.
    Romero, E.
    Calderon, C.
    Gordillo, G.
    [J]. BRAZILIAN JOURNAL OF PHYSICS, 2006, 36 (3B) : 1046 - 1049
  • [4] Cullity B. D., ELEMENTS XRAY DIFFRA
  • [5] Influence of annealing on physical properties of evaporated SnS films
    Devika, M.
    Reddy, N. Koteeswara
    Ramesh, K.
    Gunasekhar, K. R.
    Gopal, E. S. R.
    Reddy, K. T. Ramakrishna
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) : 1125 - 1131
  • [6] Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique
    Devika, M.
    Reddy, N. Koteeswara
    Reddy, D. Sreekantha
    Reddy, S. Venkatramana
    Ramesh, K.
    RGopal, E. S.
    Gunasekhar, K. R.
    Ganesan, V.
    Hahn, Y. B.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (30)
  • [7] Pressure-induced structural phase transition in the IV-VI semiconductor SnS
    Ehm, L
    Knorr, K
    Dera, P
    Krimmel, A
    Bouvier, P
    Mezouar, M
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (21) : 3545 - 3554
  • [8] Optical properties of thermally evaporated SnS thin films
    El-Nahass, MM
    Zeyada, HM
    Aziz, MS
    El-Ghamaz, NA
    [J]. OPTICAL MATERIALS, 2002, 20 (03) : 159 - 170
  • [9] Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition
    Gao, Chao
    Shen, Honglie
    Sun, Lei
    [J]. APPLIED SURFACE SCIENCE, 2011, 257 (15) : 6750 - 6755
  • [10] Chemical bath deposition of SnS films with different crystal structures
    Gao, Chao
    Shen, Honglie
    Sun, Lei
    Shen, Zhou
    [J]. MATERIALS LETTERS, 2011, 65 (09) : 1413 - 1415
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