A Leakage Current Model for SOI based Floating Body Memory that Includes the Poole-Frenkel Effect

被引：12

作者：

Nayfeh, Ammar ^{[1
]}

Koldyaev, Viktor ^{[1
]}

Beaud, Patrice ^{[2
]}

Nagoge, Mikhail ^{[2
]}

Okhonin, Serguei ^{[2
]}

机构：

[1] Innovat Silicon, 4800 Great Amer Pkwy,Suite 500, Santa Clara, CA 95054 USA

[2] Innovat Silicon, CH-1015 Lausanne, Switzerland

来源：

2008 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2008年

关键词：

D O I：

10.1109/SOI.2008.4656301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The leakage current of SOI based Floating Body Memory (FBM) has been modeled. The model takes Into account oxide/SOI interface traps (D-it) and Electric Field Enhanced (EFE) generation of electron hole pairs (EHPs) from trap states via the Poole-Frenkel Effect (PFE). This model has been used to improve the retention time of Z-RAM by a reduction of both D-it and electric field. It can also be extended to SOI based low power devices.

引用

页码：75 / +

页数：2