Accurate Modeling and Analysis of Currents in Trapezoidal FinFET Devices

被引：0
|
作者：
Rao, R. [1 ]
Bansal, A. [2 ]
Kim, J. [1 ]
Roy, K. [2 ]
Chuang, C. T. [1 ]
机构：
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY USA
[2] Purdue Univ, W Lafayette, IN 47907 USA
来源：
2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：39 / +
页数：2
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