InP- and GaAs-Based Plasmonic High-Electron-Mobility Transistors for Room-Temperature Ultrahigh-Sensitive Terahertz Sensing and Imaging

被引：68

作者：

Watanabe, Takayuki ^{[1
]}

Boubanga-Tombet, Stephane A. ^{[2
]}

Tanimoto, Yudai ^{[1
]}

Fateev, Denis ^{[3
]}

Popov, Viacheslav ^{[3
]}

Coquillat, Dominique ^{[4
]}

Knap, Wojciech ^{[4
]}

Meziani, Yahya M. ^{[5
]}

Wang, Yuye ^{[6
]}

Minamide, Hiroaki ^{[6
]}

Ito, Hiromasa ^{[6
]}

Otsuji, Taiichi ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, RIEC, Sendai, Miyagi 9808577, Japan

[3] Saratov NG Chernyshevskii State Univ, Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Saratov 410019, Russia

[4] Univ Montpellier, CNRS, Lab LC2, F-34095 Montpellier, France

[5] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

[6] RIKEN, Adv Sci Inst, Sendai, Miyagi 9800845, Japan

来源：

IEEE SENSORS JOURNAL | 2013年 / 13卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Asymmetry; detection; high-electron-mobility transistor (HEMT); imaging; plasmon; sensing; terahertz;

D O I：

10.1109/JSEN.2012.2225831

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews recent advances in the design and performance of our original InP- and GaAs-based plasmonic high-electron-mobility transistors (HEMTs) for ultrahighly-sensitive terahertz (THz) sensing and imaging. First, the fundamental theory of plasmonic THz detection is briefly described. Second, single-gate HEMTs with parasitic antennae are introduced as a basic core device structure, and their detection characteristics and sub-THz imaging potentialities are investigated. Third, dual-grating-gate (DGG)-HEMT structures are investigated for broadband highly sensitive detection of THz radiations, and the record sensitivity and the highly-sensitive THz imaging are demonstrated using the InP-based asymmetric DGG-HEMTs. Finally, the obtained results are summarized and future trends are addressed.

引用

页码：89 / 99

页数：11

共 2 条

[1] Terahertz Imaging with InP High-electron-mobility Transistors
Watanabe, Takayuki
Akagawa, Keisuke
Tanimoto, Yudai
Coquillat, Dominique
Knap, Wojciech
Otsuji, Taiichi
TERAHERTZ PHYSICS, DEVICES, AND SYSTEMS V: ADVANCE APPLICATIONS IN INDUSTRY AND DEFENSE, 2011, 8023
[2] Nonresonant Detection of Terahertz Radiation in High-Electron-Mobility Transistor Structure Using InAlAs/InGaAs/InP Material Systems at Room Temperature
El Moutaouakil, A.
Suemitsu, T.
Otsuji, T.
Coquillat, D.
Knap, W.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (08) : 6737 - 6740

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